Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3
نویسندگان
چکیده
منابع مشابه
Pressure-induced unconventional superconducting phase in the topological insulator Bi2Se3.
Simultaneous low-temperature electrical resistivity and Hall effect measurements were performed on single-crystalline Bi2Se3 under applied pressures up to 50 GPa. As a function of pressure, superconductivity is observed to onset above 11 GPa with a transition temperature Tc and upper critical field Hc2 that both increase with pressure up to 30 GPa, where they reach maximum values of 7 K and 4 T...
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We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgeman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure...
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An interface electron state at the junction between a three-dimensional topological insulator film, Bi2Se3, and a ferrimagnetic insulator film, Y3Fe5O12 (YIG), was investigated by measurements of angle-resolved photoelectron spectroscopy and x-ray absorption magnetic circular dichroism. The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ in the YI...
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The outstanding problem in topological insulators is the bulk metallicity underneath topologically ordered surface states and the appearance of Dirac point far away from the Fermi energy. Enormous efforts are being devoted to get the Dirac point at the Fermi level via exposure to foreign materials so that these materials can be used in technology and realize novel fundamental physics. Ironicall...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2015
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4934590